ACE1550B

P-Channel Enhancement Mode Field Effect Transistor

VER 1.2

1

Description

The ACE1550B combines advanced trench MOSFET technology with a low resistance package to

provide This device is ideal for Power Supply Converter Circuits and Load/Power Switching Cell Phones,

Pagers.

Features

DS

(V) =-20V

DS(ON)

<620m

Ω (V

DS(ON)

<860m

Ω (V

DS(ON)

<1450m

Ω (V

Absolute Maximum Ratings

Parameter

Symbol

Max

Unit

Drain-Source Voltage

-20

V

Gate-Source Voltage

±12

V

Continuous Drain Current * AC

-0.7

A

-0.56

Pulsed Drain Current * B

-1

A

Power Dissipation

0.27

W

0.16

Packaging Type

SOT-523