ACE4614B datasheet(5/9 Pages) ACE

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ACE4614B

30V Complementary Enhancement Mode Field Effect Transistor

VER 1.2

P-channel Electrical Characteristics TA=25 OC unless otherwise noted

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=-250uA

-30

Zero Gate Voltage Drain Current

IDSS

VDS=-30V, VGS=0V

-1

Gate Leakage Current

IGSS

VGS=±20V, VDS=0V

100

Static Drain-Source On-Resistance

RDS(ON)

VGS=-10V, ID=-9.7A

17.1

VGS=-4.5V, ID=-7A

20.7

Gate Threshold Voltage

VGS(th)

VDS=VGS, ID=-250uA

-1

-1.2

-2

Forward Transconductance

gFS

VDS=-5V, ID=-8A

21.7

Diode Forward Voltage

VSD

ISD=-1A, VGS=0V

-0.74

-1.0

Maximum Body-Diode Continuous

Current

-2.1

Switching

Total Gate Charge

VDS=-15V, ID=-8A

VGS=-10V

33.82

43.97

Gate-Source Charge

Qgs

4.93

6.41

Gate-Drain Charge

Qgd

5.2

6.76

Turn-On Delay Time

Td(on)

VDS=-15V,RGEN=6Ω,

VGS=-10V

RL=15Ω

15.44

30.88

Turn-On Rise Time

5.04

10.08

Turn-Off Delay Time

td(off)

71.04

142.08

Turn-Off Fall Time

16.8

33.6

Dynamic

Input Capacitance

Ciss

VDS=-15V, VGS=0V

f=1MHz

1973

2200

Output Capacitance

Coss

491

Reverse Transfer Capacitance

Crss

231

325

Note.

The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with

TA=25°C. The value in any given application depends on the user's specific board design.

Repetitive rating, pulse width limited by junction temperature.

The current rating is based on the t

≤10s junction to ambient thermal resistance rating.

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