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ACE4614B Datasheet(PDF) 1 Page - ACE Technology Co., LTD. |
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ACE4614B Datasheet(HTML) 1 Page - ACE Technology Co., LTD. |
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1 / 9 page  ACE4614B 30V Complementary Enhancement Mode Field Effect Transistor VER 1.2 1 Description The ACE4614B uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. Features N-channel V DS=30V I D=9A R DS(ON)<14mΩ(VGS=10V) R DS(ON)<22mΩ(VGS=4.5V) P-channel V DS=-30V I D=-8A R DS(ON)<20mΩ(VGS=-10V) R DS(ON)<35mΩ(VGS=-4.5V) Absolute Maximum Ratings Parameter Symbol N-channel P-channel Unit Drain-Source Voltage VDSS 30 -30 V Gate-Source Voltage VGSS ±20 ±20 V Drain Current (Continuous) * AC TA=25 OC ID 9 -8 A TA=70 OC 7.2 -6.4 Drain Current (Pulse) * B IDM 40 -40 Power Dissipation TA=25 OC PD 2 2 W TA=70 OC 1.3 1.3 Operating and Storage Temperature Range TJ,TSTG -55 to 150 -55 to 150 OC Packaging Type SOP-8 |
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