STPS3150-Y datasheet(3/8 Pages) STMICROELECTRONICS

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STPS3150-Y

Characteristics

Doc ID 018926 Rev 1

3/7

Figure 3.

Non repetitive surge peak forward

current versus overload duration

(maximum values)

Figure 4.

Normalized avalanche power

derating versus pulse duration

I (A)

1.E-03

1.E-02

1.E-01

1.E+00

δ=0.5

t(s)

T =25°C

T =75°C

T =125°C

SMB

0.001

0.01

0.1

0.01

0.1

100

1000

t (µs)

P(tp)

(1 µs)

ARM

Figure 5.

Normalized avalanche power

derating versus junction

temperature

Figure 6.

Relative variation of thermal

impedance junction to ambient

versus pulse duration

0.2

0.4

0.6

0.8

1.2

100

125

150

T (°C)

P(Tj)

(25 °C)

ARM

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

Z/R

th(j-a)

δ=tp/T

t (s)

SMB

Single pulse

Figure 7.

Reverse leakage current versus

reverse voltage applied (typical

values)

Figure 8.

Junction capacitance versus

reverse voltage applied (typical

values)

I (µA)

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

100

125

150

V (V)

T =125°C

T =150°C

T =100°C

T =50°C

T =25°C

T =75°C

C(pF)

100

1000

100

1000

F=1MHz

=30mV

T =25°C

OSC

RMS

V (V)

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