STP32NM50N datasheet(3/21 Pages) STMICROELECTRONICS

3 / 21 page

STB32NM50N, STF32NM50N, STP32NM50N, STW32NM50N

Electrical ratings

Doc ID 023436 Rev 1

3/21

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

D²PAK, TO-220,

TO-247

TO-220FP

VDS

Drain-source voltage

500

VGS

Gate- source voltage

± 25

Drain current (continuous) at TC = 25 °C

22 (1)

Limited by maximum junction temperature.

Drain current (continuous) at TC = 100 °C

13.86

13.86 (1)

IDM

(2)

Pulse width limited by safe operating area.

Drain current (pulsed)

PTOT

Total dissipation at TC = 25 °C

190

IAR

Avalanche current, repetitive or not-

repetitive (pulse width limited by TJ max)

EAS

Single pulse avalanche energy

(starting TJ = 25 °C, ID = IAR, VDD = 50 V)

340

dv/dt(3)

ISD ≤ 22 A, di/dt ≤ 400 A/µs, VDS peak ≤V(BR)DSS, VDD ≤ 80% V(BR)DSS

Peak diode recovery voltage slope

V/ns

VISO

Insulation withstand voltage (RMS) from

all three leads to external heat sink

(t = 1 s; TC = 25 °C)

2500

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

150

Table 3.

Thermal data

Symbol

Parameter

D²PAK

TO-220FP TO-220 TO-247

Unit

Rthj-case Thermal resistance junction-case max

0.66

3.6

0.66

°C/W

Rthj-amb Thermal resistance junction-ambient max

62.5

Rthj-pcb

(1)

When mounted on FR-4 board of 1 inch², 2 oz Cu.

Thermal resistance junction-pcb max

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