STD4N52K3 datasheet(3/21 Pages) STMICROELECTRONICS

3 / 21 page

STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3

Electrical ratings

Doc ID 18206 Rev 2

3/21

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220 DPAK

IPAK

TO-220FP

Drain-source voltage (V

= 0)

525

Gate- source voltage

± 30

Drain current (continuous) at T

= 25 °C

2.5

(1)

Limited by package

Drain current (continuous) at T

= 100 °C

(1)

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

(1)

TOT

Total dissipation at T

= 25 °C

Avalanche current, repetitive or not-

repetitive (pulse width limited by T

max)

1.3

Single pulse avalanche energy

(starting T

= 25°C, I

= I

, V

= 50V)

110

dv/dt

(3)

≤ 2.5 A, di/dt = 400 A/μs, peak V

≤ V

(BR)DSS

, V

= 80% V

(BR)DSS.

Peak diode recovery voltage slope

V/ns

ISO

Insulation withstand voltage (RMS) from

all three leads to external heat sink

(t = 1 s; TC = 25 °C)

2500

stg

Storage temperature

-55 to 150

°C

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

TO-220 DPAK

IPAK

TO-220FP

thj-case

Thermal resistance junction-case max

2.78

6.25

°C/W

thj-pcb

(1)

When mounted on 1inch sq FR-4 board, 2 oz Cu

Thermal resistance junction-pcb max

°C/W

thj-amb

Thermal resistance junction-ambient max

62.5

100

62.5

°C/W

Maximum lead temperature for soldering

purpose

300

°C

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