STD4N52K3, STF4N52K3, STP4N52K3, STU4N52K3

Electrical characteristics

Doc ID 18206 Rev 2

5/21

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

I

SD

I

SDM

(1)

1.

Pulse width limited by safe operating area

Source-drain current

Source-drain current (pulsed)

-

2.5

10

A

A

V

SD

(2)

2.

Pulsed: Pulse duration = 300 μs, duty cycle 1.5%

Forward on voltage

I

SD

= 2.5 A, V

GS

= 0

-

1.6

V

t

rr

Q

rr

I

RRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

I

SD

= 2.5 A, di/dt = 100 A/μs

V

DD

= 60 V (see

Figure 23)

-

173

778

9

ns

nC

A

t

rr

Q

rr

I

RRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

I

SD

= 2.5 A, di/dt = 100 A/μs

V

DD

= 60 V, T

j

= 150 °C

(see

Figure 23)

-

196

941

10

ns

nC

A

Table 8.

Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

BV

GSO

(1)

1.

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components

Gate-source breakdown

voltage

Igs=± 1 mA (open drain)

30

-

V