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STW88N65M5 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STW88N65M5
Description  N-channel 650 V, 0.024 廓 typ., 84 A, MDmesh??V Power MOSFET in TO-247 and TO-247 long leads packages
PDF  15 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW88N65M5 Datasheet(HTML) 5 Page - STMicroelectronics

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STW88N65M5, STWA88N65M5
Electrical characteristics
Table 6. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(V)
tr(V)
tf(i)
tc(off)
Voltage delay time
Voltage rise time
Current fall time
Crossing time
VDD = 400 V, ID = 56 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 17)
(see Figure 20)
-
141
16
29
56
-
ns
ns
ns
ns
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
-
84
336
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 84 A, VGS = 0
-
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 84 A,
di/dt = 100 A/µs
VDD = 100 V (see Figure 17)
-
544
14
50
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 84 A,
di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 17)
-
660
20
60
ns
µC
A



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