IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTA50N25T IXTQ50N25T

IXTP50N25T IXTH50N25T

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ .

Max.

g

fs

V

35

58

S

C

iss

4000

pF

C

oss

V

410

pF

C

rss

60

pF

t

d(on)

14

ns

t

r

25

ns

t

d(off)

47

ns

t

f

25

ns

Q

g(on)

78

nC

Q

gs

V

19

nC

Q

gd

22

nC

R

thJC

0.31

°C/W

R

thCH

(TO-220)

0.50

°C/W

(TO-3P & TO-247)

0.25

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ .

Max.

I

S

V

50

A

I

SM

Repetitive, Pulse Width Limited by T

JM

200

A

V

SD

I

1.5

V

t

rr

166

ns

I

RM

23

A

Q

RM

1.9

μC

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or moreof the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Resistive Switching Times

V

R

I

V