IXTP50N25T datasheet(1/6 Pages) IXYS

Part #	IXTP50N25T

Description	Trench Gate Power MOSFET N-Channel Enhancement Mode

PDF	6 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 6 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 150°C

250

V

DGR

T

J

= 25

°C to 150°C, R

GS = 1MΩ

250

V

GSM

Transient

±

30

V

I

D25

T

C = 25°C50

A

I

DM

T

C = 25°C, Pulse Width Limited by TJM

130

A

I

A

T

C = 25°C

5

A

E

AS

T

C = 25°C

1.5

J

P

D

T

C = 25°C

400

W

T

J

-55 ... +150

°C

T

JM

150

°C

T

stg

-55 ... +150

°C

T

L

1.6mm (0.062in.) from Case for 10s

300

°C

Plastic Body for 10 s

260

°C

M

d

Mounting Torque (TO-220, TO-3P &TO-247)

1.13 / 10

Nmlb.in.

F

C

Mounting Force (TO-263)

10..65 / 2.2..14.6

N/lb.

Weight

TO-263

2.5

g

TO-220

3.0

g

TO-3P

5.5

g

TO-247

6.0

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C Unless Otherwise Specified)

Min.

Typ .

Max.

BV

DSS

V

GS = 0V, ID = 1mA

250

V

GS(th)

V

DS = VGS, ID = 1mA

3.0

5.0

V

I

GSS

V

GS = ± 20V, VDS = 0V

± 100 nA

I

DSS

V

DS = VDSS, VGS = 0V

1

μA

T

J = 125°C

150

μA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

60 m

Ω

Trench Gate

Power MOSFET

N-Channel Enhancement Mode

Features

Avalanche Rated

High Current Handling Capability

Fast Intrinsic Rectifier

Low R

DS(on)

Advantages

High Power Density

Easy to Mount

Space Savings

Applications

DC-DC Coverters

Battery Chargers

Switch-Mode and Resonant-Mode

Power Supplies

DC Choppers

AC and DC Motor Drives

Uninterrupted Power Supplies

High Speed Power Switching

Applications

V

DSS

= 250V

I

D25

= 50A

R

DS(on) ≤

≤≤≤≤ 60m

Ω

DS99346B(01/10)

IXTA50N25T IXTQ50N25T

IXTP50N25T IXTH50N25T

G D

S

TO-220AB (IXTP)

D (Tab)

TO-263 AA (IXTA)

G

S

D (Tab)

G = Gate

D

= Drain

S = Source

Tab = Drain

TO-3P (IXTQ)

G

D

S

D (Tab)

TO-247 (IXTH)

G

D

S

D (Tab)

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