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IXTP102N15T Datasheet(PDF) 6 Page - IXYS Corporation

Part # IXTP102N15T
Description  Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated
PDF  7 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXTP102N15T Datasheet(HTML) 6 Page - IXYS Corporation

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IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA102N15T IXTH102N15T
IXTP102N15T IXTQ102N15T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
12
13
14
15
16
17
18
50
55
60
65
70
75
80
85
90
95
100
105
ID - Amperes
RG = 3.3Ω
VGS = 10V
VDS = 75V
TJ = 25ºC
TJ = 125ºC
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
0
10
20
30
40
50
60
70
80
90
100
2
4
6
8
1012
14
161820
RG - Ohms
12
14
16
18
20
22
24
26
28
30
32
t r
td(on) - - - -
TJ = 125ºC, VGS = 10V
VDS = 75V
I D = 102A
I D = 51A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
20
21
22
23
24
25
26
27
28
29
30
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
20
22
24
26
28
30
32
34
36
38
40
t f
td(off) - - - -
RG = 3.3Ω, VGS = 10V
VDS = 75V
I D = 51A
I D = 102A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
20
21
22
23
24
25
26
50
55
60
65
70
75
80
85
90
95
100 105
ID - Amperes
18
22
26
30
34
38
42
t f
td(off) - - - -
RG = 3.3Ω, VGS = 10V
VDS = 75V
TJ = 25ºC
TJ = 125ºC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
10
11
12
13
14
15
16
17
18
19
25
35
45
55
65
75
85
95
105
115
125
TJ - Degrees Centigrade
RG = 3.3Ω
VGS = 10V
VDS = 75V
I D = 102A
I D = 51A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
0
40
80
120
160
200
240
280
2
4
6
8
10
12
14
16
18
20
RG - Ohms
20
40
60
80
100
120
140
160
t f
td(off) - - - -
TJ = 125ºC, VGS = 10V
VDS = 75V
I D = 51A
I D = 102A



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