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STE140NF20D Datasheet(PDF) 3 Page - STMicroelectronics |
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STE140NF20D Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 13 page ![]() STE140NF20D Electrical ratings Doc ID 15299 Rev 4 3/13 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 200 V VGS Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25 °C 140 A ID Drain current (continuous) at TC=100 °C 88 A IDM (1) 1. Pulse width limited by safe operating area Drain current (pulsed) 560 A PTOT Total dissipation at TC = 25 °C 500 W IAR (2) 2. Pulse width limited by Tjmax Avalanche current, repetitive or not repetitive 140 A EAS (3) 3. Strating Tj = 25 °C, ID = IAR, VDD = 50 V Single pulse avalanche energy 800 mJ dv/dt(4) 4. ISD ≤ 140 A, di/dt ≤ 1000 A/µs, VDD ≤ 80% V(BR)DSS Peak diode recovery voltage slope 25 V/ns VISO Insulation winthstand voltage (AC-RMS) 2500 V TJ Tstg Operating junction temperature Storage temperature - 55 to 150 °C Table 3. Thermal resistance Symbol Parameter Value Unit Rthj-case Thermal resistance junction-case 0.25 °C/W Rthj-amb Thermal resistance junction-ambient 40 °C/W |
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