STE140NF20D datasheet(4/13 Pages) STMICROELECTRONICS

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Electrical characteristics

STE140NF20D

4/13

Doc ID 15299 Rev 4

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1 mA, VGS= 0

200

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 200 V,

VDS = 200 V, TC = 125 °C

100

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20 V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 70 A

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f=1 MHz,

VGS=0

11100

2190

334

Co(tr)

(1)

Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when

VDS increases from 0 to 80% VDSS

Equivalent capacitance time

VDS = 0 to 160 V, VGS = 0,

1525

Co(er)

(2)

Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss

when VDS increases from 0 to 80% VDSS

Equivalent capacitance

energy related

1139

Intrinsic gate resistance

f = 1 MHz open drain

1.4

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 160 V, ID = 140 A,

VGS= 10 V

(see Figure 16)

338

183

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