STF14NM50N datasheet(4/26 Pages) STMICROELECTRONICS

4 / 26 page

Electrical characteristics

STB14NM50N, STD14NM50N, STF14NM50N, STI14NM50N, STP14NM50N

4/26

Doc ID 16832 Rev 6

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5.

On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0

500

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 620 V

VDS = 620 V, TC=125 °C

100

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 25 V

± 100

VGS(th)

Gate threshold voltage VDS = VGS, ID = 100 µA

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 6 A

0.28

0.32

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0

816

Coss eq.

(1)

Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS

increases from 0 to 80% VDS

Equivalent output

capacitance

VDS = 0 to 50 V, VGS = 0

307.5

Intrinsic gate

resistance

f = 1 MHz open drain

4.5

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD =400 V, ID =12 A,

VGS =10 V (see Figure 18)

4.6

Table 7.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off-delay time

Fall time

VDD = 400 V, ID = 12 A,

RG =4.7 Ω, VGS = 10 V

(see Figure 19)

10.2

STF14NM50N Datasheet(PDF) 4 Page - STMicroelectronics

STF14NM50N Datasheet(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26

Datasheet Download

Link URL