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STF14NM50N Datasheet(PDF) 5 Page - STMicroelectronics

Part # STF14NM50N
Description  N-channel 500 V, 0.28 廓 typ., 12 A MDmesh??II Power MOSFET in D짼PAK, DPAK, TO-220FP, I짼PAK and TO-220 packages
PDF  26 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF14NM50N Datasheet(HTML) 5 Page - STMicroelectronics

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STB14NM50N, STD14NM50N, STF14NM50N, STI14NM50N, STP14NM50N
Electrical characteristics
Doc ID 16832 Rev 6
5/26
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
-
12
48
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage
ISD = 12 A, VGS = 0
-
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 12 A, di/dt = 100 V/ns,
VDD = 400 V
(see Figure 22)
-
252
2.8
22
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 12 A, di/dt = 100 V/ns,
VDD = 400 V, TJ = 150 °C
(see Figure 22)
-
300
3.3
22.2
ns
µC
A



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