STD3PK50Z

Electrical ratings

Doc ID 18280 Rev 2

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1

Electrical ratings

Note:

For the P-channel Power MOSFETs actual polarity of voltages and current has to be

reversed.

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

Drain source voltage

500

V

Gate- source voltage

± 30

V

2.8

A

1.8

A

(1)

1.

Pulse width limited by safe operating area.

Drain current (pulsed)

11

A

85

W

Max current during repetitive or single pulse

2.8

A

Single pulse avalanche energy

200

mJ

2.

Peak diode recovery voltage slope

40

V/ns

ESD

Gate-source human body model

(R = 1,5 k, C = 100 pF)

3kV

Operating junction temperature

Storage temperature

- 55 to 150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

1.47

°C/W

Rthj-pcb

Thermal resistance junction-pcb max

50

°C/W