73113 datasheet(3/8 Pages) VISHAY

3 / 8 page

Document Number: 73113

S09-0271-Rev. C, 16-Feb-09

www.vishay.com

Vishay Siliconix

Si7465DP

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

On-Resistance vs. Drain Current

Gate Charge

Source-Drain Diode Forward Voltage

0.00

0.02

0.04

0.06

0.08

0.10

0.12

VGS = 10 V

ID - Drain Current (A)

VGS = 4.5 V

10203040

VDS = 30 V

ID = 5 A

Qg - Total Gate Charge (nC)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

VSD - Source-to-Drain Voltage (V)

TJ = 150 °C

TJ = 25 °C

Capacitance

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

300

600

900

1200

1500

1800

102030

405060

VDS - Drain-to-Source Voltage (V)

Crss

oss

Ciss

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

- 50

- 25

100

125

150

VGS = 10 V

ID = 5 A

TJ - Junction Temperature (°C)

0.00

0.05

0.10

0.15

0.20

0.25

0.30

2468

VGS - Gate-to-Source Voltage (V)

ID = 5 A

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