STP52N25M5 datasheet(5/12 Pages) STMICROELECTRONICS

Part #	STP52N25M5

Description	N-channel 250 V, 0.055 廓, 28 A, TO-220 MDmeshTM V Power MOSFET

PDF	12 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 12 page

STP52N25M5

Electrical characteristics

Doc ID 17776 Rev 1

5/12

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

td(V)

tr(V)

tf(i)

tc(off)

Voltage delay time

Voltage rise time

Current fall time

Crossing time

VDD = 125 V, ID = 14 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 13)

Table 7.

Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

ISD

ISDM

(1)

Pulse width limited by safe operating area.

Source-drain current

Source-drain current (pulsed)

112

VSD

(2)

Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Forward on voltage

ISD = 28 A, VGS = 0

1.6

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 28 A, di/dt = 100 A/µs

VDD= 60 V, TJ = 25 °C

(see Figure 15)

168

1.2

14.5

µC

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD = 28 A, di/dt = 100 A/µs

VDD= 60 V TJ = 150 °C

(see Figure 15)

196

1.7

µC

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