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IXGN60N60C2 Datasheet(PDF) 1 Page - IXYS Corporation |
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IXGN60N60C2 Datasheet(HTML) 1 Page - IXYS Corporation |
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1 / 5 page ![]() © 2009 IXYS CORPORATION, All Rights Reserved Symbol Test Conditions Characteristic Values (T J = 25°C, Unless Otherwise Specified) Min. Typ. Max. V GE(th) I C = 250μA, V CE = VGE 3.0 5.0 V I CES V CE = VCES 650 μA V GE = 0V T J = 125°C 5 mA I GES V CE = 0V, VGE = ±20V ±100 nA V CE(sat) I C = 50A, V GE = 15V, Note 1 2.1 2.5 V T J = 125°C 1.8 V HiPerFASTTM IGBTs with Diode Symbol Test Conditions Maximum Ratings V CES T J = 25°C to 150°C 600 V V CGR T J = 25°C to 150°C, R GE = 1 MΩ 600 V V GES Continuous ±20 V V GEM Transient ±30 V I C25 T C = 25°C (Limited by Leads) 75 A I C110 T C = 110°C 60 A I CM T C = 25°C, 1 ms 300 A SSOA V GE = 15 V, TVJ = 125°C, RG = 10 Ω I CM = 100 A (RBSOA) Clamped Inductive Load @ V CE ≤ 600 V P C T C = 25°C 480 W T J -55 ... +150 °C T JM 150 °C T stg -55 ... +150 °C V ISOL 50/60 Hz t = 1 min 2500 V~ I ISOL ≤ 1 mA t = 1 s 3000 V~ M d Mounting Torque 1.5/13 Nm/lb.in. Terminal Connection Torque (M4) 1.3/11.5 Nm/lb.in. Weight 30 g DS99177A(01/09) IXGN60N60C2 IXGN60N60C2D1 C2-Class High Speed IGBTs Features International Standard Package miniBLOC Aluminium Nitride Isolation - High Power Dissipation Anti-Parallel Ultra Fast Diode Isolation Voltage 3000 V~ Low V CE(sat) for Minimum On-State Conduction Losses MOS Gate Turn-on - Drive Simplicity Low Collector-to-Case Capacitance (< 50 pF) Low Package Inductance (< 5 nH) - Easy to Drive and to Protect Applications AC Motor Speed Control DC Servo and Robot Drives DC Choppers Uninterruptible Power Supplies (UPS) Switch-Mode and Resonant-Mode Power Supplies Advantages Easy to Mount with 2 Screws Space Savings High Power Density V CES = 600V I C110 = 60A V CE(sat) ≤ ≤≤≤≤ 2.5V t rr = 35ns SOT-227B, miniBLOC G = Gate, C = Collector, E = Emitter Either Emitter Terminal can be used as Main or Kelvin Emitter G E E C E153432 E E 60C2D1 60C2 |
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