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IXGN60N60C2

IXGN60N60C2D1

200

600

1000

0

400

800

80

90

100

110

120

130

140

0.00001

0.0001

0.001

0.01

0.1

1

0.0001

0.001

0.01

0.1

1

0

40

80

120

160

0.0

0.5

1.0

1.5

2.0

K

f

T

VJ

°C

-di

t

s

K/W

0

200

400

600

800

1000

0

5

10

15

20

0.0

0.4

0.8

1.2

1.6

V

FR

di

V

200

600

1000

0

400

800

0

20

40

60

80

100

1000

0

1000

2000

3000

4000

01

2

0

20

40

60

80

100

120

140

160

I

RM

Q

r

I

F

A

V

F

-di

-di

A/

μs

A

V

nC

A/

μs

A/

μs

t

rr

ns

t

fr

A/

μs

μs

DSEP 2x61-06A

Z

thJC

Fig. 27. Maximum Transient Thermal Impeadance Juection to Case (for Diode)

T

V

T

V

T

100°C

25°C

I

I

RM

Q

RM

I

T

V

t

rr

V

FR

I

T

I

Fig. 13. Forward Current I

Fig. 15. Peak Reverse Current I

RM

Versus -di

Fig. 14. Reverse Recorvery Charge Q

r

Versus -di

Fig. 18. Peak Forward Voltage V

RM

and t

Fig. 17. Recorvery Time t

-di

Fig. 16. Dynamic Paraments Q

Versus T

vJ

Fig. 27. Maximum Transient Thermal Impedance (for diode)

0.001

0.010

0.100

1.000

0.0001

0.001

0.01

0.1

1

10

Pulse Width [ s ]