2PB709BRL_2PB709BSL

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© NXP B.V. 2010. All rights reserved.

Product data sheet

Rev. 1 — 28 June 2010

2 of 13

NXP Semiconductors

2PB709BRL; 2PB709BSL

50 V, 200 mA PNP general-purpose transistors

2.

Pinning information

3.

Ordering information

4.

Marking

[1]

* = -: made in Hong Kong

* = p: made in Hong Kong

* = t: made in Malaysia

* = W: made in China

5.

Limiting values

Table 3.

Pinning

Pin

Description

Simplified outline

Graphic symbol

1base

2emitter

3

collector

12

3

sym013

3

2

1

Table 4.

Ordering information

Type number

Package

Name

Description

Version

2PB709BRL

-

plastic surface-mounted package; 3 leads

SOT23

2PB709BSL

Table 5.

Marking codes

Type number

Marking code[1]

2PB709BRL

MN*

2PB709BSL

MP*

Table 6.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

collector-base voltage

open emitter

-

−60

V

collector-emitter voltage

open base

-

−50

V

emitter-base voltage

open collector

-

−6V

collector current

-

−200

mA

peak collector current

single pulse;

-

−250

mA

peak base current

single pulse;

-

−200

mA