STM8S005K6 datasheet(71/103 Pages) STMICROELECTRONICS

Part #	STM8S005K6

Description	Value line, 16 MHz STM8S 8-bit MCU, 32 Kbytes Flash, data EEPROM,10-bit ADC, timers, UART, SPI, IC

PDF	103 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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71 / 103 page

Table 35: Flash program memory/data EEPROM memory

Unit

Max

Typ

Min

(1)

Conditions

Parameter

Symbol

5.5

2.95

fCPU ≤ 16 MHz

Operating voltage (all modes,

execution/write/erase)

VDD

6.6

6.0

Standard programming time

(including erase) for

tprog

byte/word/block (1 byte/4

bytes/128 bytes)

3.3

3.0

Fast programming time for 1 block

(128 bytes)

3.3

3.0

Erase time for 1 block (128 bytes)

terase

cycles

100

TA = 85 °C

Erase/write cycles

(2)(program

memory)

NRW

100 k

TA = 85 ° C

Erase/write cycles(data memory)

(2)

years

TRET = 55° C

Data retention (program memory)

after 100 erase/write cycles at TA

= 85 °C

tRET

Data retention (data memory) after

10 k erase/write cycles at TA = 85

°C

TRET = 85° C

Data retention (data memory) after

100 k erase/write cyclesat TA = 85

°C

2.0

Supply current (Flash

programming or erasing for 1 to

128 bytes)

IDD

(1) Data based on characterization results, not tested in production.

(2) The physical granularity of the memory is 4 bytes, so cycling is performed on 4 bytes

even when a write/erase operation addresses a single byte.

71/103

DocID022186 Rev 3

Electrical characteristics

STM8S005K6 STM8S005C6

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