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STM8AF5168 Datasheet(PDF) 83 Page - STMicroelectronics |
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STM8AF5168 Datasheet(HTML) 83 Page - STMicroelectronics |
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83 / 110 page ![]() STM8AF52/62xx, STM8AF51/61xx Electrical characteristics Doc ID 14395 Rev 9 83/110 Figure 43. ADC accuracy characteristics 1. Example of an actual transfer curve 2. The ideal transfer curve 3. End point correlation line ET = Total unadjusted error: Maximum deviation between the actual and the ideal transfer curves. EO = Offset error: Deviation between the first actual transition and the first ideal one. EG = Gain error: Deviation between the last ideal transition and the last actual one. ED = Differential linearity error: Maximum deviation between actual steps and the ideal one. EL = Integral linearity error: Maximum deviation between any actual transition and the end point correlation line. Table 46. ADC accuracy for VDDA = 5 V Symbol Parameter Conditions Typ Max(1) 1. Max value is based on characterization, not tested in production. Unit |ET| Total unadjusted error(2) 2. ADC accuracy vs. injection current: Any positive or negative injection current within the limits specified for IINJ(PIN) and ΣIINJ(PIN) in Section 10.3.6 does not affect the ADC accuracy. fADC = 2 MHz 1.4 3(3) 3. TUE 2LSB can be reached on specific salestypes on the whole temperature range. LSB |EO| Offset error(2) 0.8 3 |EG| Gain error(2) 0.1 2 |ED| Differential linearity error(2) 0.9 1 |EL| Integral linearity error(2) 0.7 1.5 |ET| Total unadjusted error(2) fADC = 4 MHz 1.9(4) 4. Target values. 4(4) |EO| Offset error(2) 1.3(4) 4(4) |EG| Gain error(2) 0.6(4) 3(4) |ED| Differential linearity error(2) 1.5(4) 2(4) |EL| Integral linearity error(2) 1.2(4) 1.5(4) EO EG 1LSBIDEAL 1LSB IDEAL V DDA V SSA – 1024 ----------------------------------------- = 1023 1022 1021 5 4 3 2 1 0 7 6 1 2 34 567 1021102210231024 (1) (2) ET ED EL (3) VDDA VSSA |
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