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FX033Z Datasheet(PDF) 24 Page - Texas Instruments |
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FX033Z Datasheet(HTML) 24 Page - Texas Instruments |
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24 / 32 page ![]() TPS51363 SLUSBB5A – FEBRUARY 2013 – REVISED JUNE 2013 www.ti.com REVISION HISTORY NOTE: Page numbers of current version may differ from previous versions. Changes from Original (February 2013) to Revision A Page • Added MIN and MAX values to IOCL spec in Elec Char table ............................................................................................... 5 • Changed the Functional Block Diagram VREFIN signal line identifier on the UV-detect device from "VREFIN – 32%" to "VREFIN – 34%". Changed signal line identifier on the high-side comparator from "VREFIN+ 8/20%" to "VREFIN+ 20%". Changed the high-side device symbol from hysteresis to a comparator. Changed signal line identifier on the low- side device from "VREFIN– 8/32%" to "VREFIN– 8/34%. ........................................................................................................... 8 • Added Land pads for a 0.1-µF capacitor between VIN and PGND of the TPS51363 Design Layout figure. .................... 21 • Added a 0.1-µF capacitor symbol between VIN and PGND of the Design 1: Application Schematic. ............................... 22 • Changed LOUT inductor part number from PIMB063T to PIMB063T-R68MS-63 in Design 1: List of Materials table. ....... 22 • Changed text from "LPDDR3" to "DDR3L" in Design 2 description section. ...................................................................... 23 • Added 0.1 µF capacitor symbol between VIN and PGND in Design 2: Application Schematic figure ............................... 23 • Changed LOUT inductor spec from 1 µH, 6.5 mΩ to 6.7 mΩ, and part number from PCME063T to PIMB063T- 1R0MS-63 in Design 2: List of Materials table. .................................................................................................................. 23 24 Submit Documentation Feedback Copyright © 2013, Texas Instruments Incorporated Product Folder Links: TPS51363 |
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