1

MRF644

MOTOROLA RF DEVICE DATA

The RF Line

NPN Silicon

RF Power Transistor

. . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial

and commercial FM equipment operating to 512 MHz.

• Specified 12.5 Volt, 470 MHz Characteristics —

Output Power = 25 Watts

Minimum Gain = 6.2 dB

Efficiency = 60%

• Characterized with Series Equivalent Large–Signal Impedance Parameters

• Built–In Matching Network for Broadband Operation

• Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @

16–Volt High Line and 50% Overdrive

• Circuit board photomaster available upon request by

contacting RF Tactical Marketing in Phoenix, AZ.

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector–Emitter Voltage

VCEO

16

Vdc

Collector–Base Voltage

VCBO

36

Vdc

Emitter–Base Voltage

VEBO

4.0

Vdc

Collector Current — Continuous

IC

4.0

Adc

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

103

0.59

Watts

W/

°C

Storage Temperature Range

Tstg

– 65 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Case

R

θJC

1.7

°C/W

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

(IC = 20 mAdc, IB = 0)

V(BR)CEO

16

—

—

Vdc

Collector–Emitter Breakdown Voltage

(IC = 20 mAdc, VBE = 0)

V(BR)CES

36

—

—

Vdc

Emitter–Base Breakdown Voltage

(IE = 5.0 mAdc, IC = 0)

V(BR)EBO

4.0

—

—

Vdc

Collector Cutoff Current

(VCE = 15 Vdc, VBE = 0, TC = 25°C)

ICES

—

—

5.0

mAdc

(continued)

Order this document

by MRF644/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MRF644

25 W, 470 MHz

CONTROLLED Q

RF POWER

TRANSISTOR

NPN SILICON

CASE 316–01, STYLE 1

REV 6