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DB2X4100L Datasheet(PDF) 1 Page - Panasonic Semiconductor |
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DB2X4100L Datasheet(HTML) 1 Page - Panasonic Semiconductor |
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1 / 5 page ![]() Product Standards Schottky Barrier Diode DB2X41400L Absolute Maximum Ratings Ta = 25 C Note: *1 For embedded alumina substrate *2 50 Hz sine wave 1 cycle (Non-repetitive peak current) Page °C -55 to +125 Storage temperature Tstg -40 to Topr Internal Connection A Unit Parameter Symbol Rating Repetitive peak reverse voltage VRRM 40 V 1of 4 Unit: mm 2. Anode Forward current (Average) IF(AV) = 2 A rectification is possible Low forward voltage VF Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) Marking Symbol: DB2X41400L Silicon epitaxial planar type For high frequency rectification Features Code 1. Cathode SOD-123 Panasonic Mini2-F4-B JEITA SC-109D 4P Packaging Embossed type (Thermo-compression sealing) : 3 000 pcs / reel (standard) VR 40 Non-repetitive peak forward surge current *2 IFSM +85 °C Operating ambient temperature V Forward current (Average) *1 IF(AV) 2 A 15 Reverse voltage Junction temperature Tj 125 °C 1 2 1.6 0.8 0.55 0.13 1 2 Doc No. TT4-EA-12043 Revision. 3 Established : 2009-12-21 Revised : 2013-04-26 |
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