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IXGR32N60C Datasheet(PDF) 1 Page - IXYS Corporation

Part # IXGR32N60C
Description  HiPerFASTTM IGBT Lightspeed Series ISOPLUS247TM package(Electrically Isolated Back Side)
PDF  4 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXGR32N60C Datasheet(HTML) 1 Page - IXYS Corporation

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© 2004 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
T
J
= 25
°C to 150°C
600
V
V
CGR
T
J
= 25
°C to 150°C; R
GE = 1 MΩ
600
V
V
GES
Continuous
±20
V
V
GEM
Transient
±30
V
I
C25
T
C = 25°C45
A
I
C110
T
C = 110°C26
A
I
CM
T
C = 25°C, 1 ms
120
A
SSOA
V
GE = 15 V, TVJ = 125°C, RG = 10 Ω
I
CM = 64
A
(RBSOA)
Clamped inductive load, L = 100
µH
@ 0.8 V
CES
P
C
T
C = 25°C
140
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
Maximum lead temperature for soldering
300
°C
1.6 mm (0.062 in.) from case for 10 s
V
ISOL
50/60 Hz, RMS, t = 1minute leads-to-tab
2500
V
Weight
6g
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ. max.
V
GE(th)
I
C
= 250
µA, V
CE = VGE
2.5
5
V
I
CES
V
CE = VCES
T
J =
25
°C
200
µA
V
GE = 0 V
T
J = 150°C1
mA
I
GES
V
CE = 600 V, VGE = ±20 V
±100
nA
V
CE(sat)
I
C
=
I
T, VGE = 15 V (see note 1)
2.3
2.7
V
DS98651C(06/04)
IXGR 32N60C
V
CE
= 600 V
I
C25
=
45 A
V
CE(sat)
= 2.7 V
t
fi typ
=
55 ns
HiPerFASTTM IGBT
Lightspeed Series
ISOPLUS247TM package
(Electrically Isolated Back Side)
Preliminary data sheet
G = Gate,
C = Collector,
E = Emitter
*Patent pending
ISOPLUS 247TM
E153432
G
C
E
Isolated Backside*
Features
DCB Isolated mounting tab
Meets TO-247AD package Outline
High current handling capability
Latest generation HDMOSTM process
MOS Gate turn-on
- drive simplicity
Applications
Uninterruptible power supplies (UPS)
Switched-mode and resonant-mode
power supplies
AC motor speed control
DC servo and robot drives
DC choppers
Advantages
Easy assembly
High power density
Very fast switching speeds for high
frequency applications


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