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STP11NM65N Datasheet(PDF) 3 Page - STMicroelectronics

Part # STP11NM65N
Description  N-channel 650 V, 0.425 Ω typ., 11 A MDmesh™II Power MOSFET in DPAK, TO-220FP, I²PAKFP and TO-220 packages
PDF  21 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP11NM65N Datasheet(HTML) 3 Page - STMicroelectronics

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Doc ID 13476 Rev 4
3/21
STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65N
Electrical ratings
21
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
Unit
TO-220, DPAK
TO-220FP
I²PAKFP
V
DS
Drain-source voltage
650
V
V
GS
Gate-source voltage
± 25
V
I
D
Drain current (continuous) at T
C
= 25 °C
11
11
(1)
1.
Limited by maximum junction temperature.
A
I
D
Drain current (continuous) at T
C
= 100 °C
7
7
(1)
A
I
DM
(2)
2.
Pulse width limited by safe operating area.
Drain current (pulsed)
44
44
(1)
A
P
TOT
Total dissipation at T
C
= 25 °C
110
25
W
I
AR
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
j
max)
3A
E
AS
Single pulse avalanche energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V)
147
mJ
dv/dt
(3)
3.
I
SD
≤ 11 A, di/dt ≤ 400 A/μs; V
Peak
< V
(BR)DSS,
V
DD
≤ 80% V
(BR)DSS
Peak diode recovery voltage slope
15
V/ns
V
ISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink
(t = 1 s; TC = 25 °C)
2500
V
T
stg
Storage temperature
- 55 to 150
°C
T
j
Max. operating junction temperature
150
°C
Table 3. Thermal data
Symbol
Parameter
Value
Unit
DPAK
TO-220FP I²PAKFP TO-220
R
thj-case
Thermal resistance junction-case max
1.14
5
1.14
°C/W
R
thj-amb
Thermal resistance junction-ambient
max
62.5
°C/W
R
thj-pcb
(1)
1.
When mounted on 1inch² FR-4 board, 2 oz Cu
Thermal resistance junction-pcb max
50
°C/W



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