DSPIC33FJ32GP302THSLASHSP datasheet(368/403 Pages) MICROCHIP

368 / 403 page

dsPIC33FJ32GP302/304, dsPIC33FJ64GPX02/X04, AND dsPIC33FJ128GPX02/X04

DS70292D-page 368

Preliminary

 2009 Microchip Technology Inc.

31.1

High Temperature DC Characteristics

TABLE 31-1:

OPERATING MIPS VS. VOLTAGE

TABLE 31-2:

THERMAL OPERATING CONDITIONS

TABLE 31-3:

DC TEMPERATURE AND VOLTAGE SPECIFICATIONS

TABLE 31-4:

DC CHARACTERISTICS: POWER-DOWN CURRENT (IPD)

Characteristic

VDD Range

(in Volts)

Temperature Range

(in °C)

Max MIPS

dsPIC33FJ32GP302/304,

dsPIC33FJ64GPX02/X04, and

dsPIC33FJ128GPX02/X04

3.0V to 3.6V

-40°C to +140°C

Rating

Symbol

Min

Typ

Max

Unit

High Temperature Devices

Operating Junction Temperature Range

-40

—

+145

°C

Operating Ambient Temperature Range

-40

—

+140

°C

Power Dissipation:

Internal chip power dissipation:

PINT = VDD x (IDD -

 IOH)

PINT + PI/O

I/O Pin Power Dissipation:

I/O =

 ({VDD - VOH} x IOH) +  (VOL x IOL)

Maximum Allowed Power Dissipation

PDMAX

(TJ - TA)/

JA

DC CHARACTERISTICS

Standard Operating Conditions: 3.0V to 3.6V

(unless otherwise stated)

Operating temperature

-40°C

 TA  +140°C for High Temperature

Parameter

No.

Symbol

Characteristic

Min

Typ

Max

Units

Conditions

Operating Voltage

HDC10

Supply Voltage

VDD

—

3.0

3.3

3.6

-40°C to +140°C

DC CHARACTERISTICS

Standard Operating Conditions: 3.0V to 3.6V

(unless otherwise stated)

Operating temperature

-40°C

 TA  +140°C for High Temperature

Parameter

No.

Typical

Max

Units

Conditions

Power-Down Current (IPD)

HDC60e

250

2000

A

+140°C

3.3V

Base Power-Down Current(1,3)

HDC61c

A

+140°C

3.3V

Watchdog Timer Current:

IWDT(2,4)

Note 1:

Base IPD is measured with all peripherals and clocks shut down. All I/Os are configured as inputs and

pulled to VSS. WDT, etc., are all switched off, and VREGS (RCON<8>) = 1.

The

 current is the additional current consumed when the module is enabled. This current should be

added to the base IPD current.

These currents are measured on the device containing the most memory in this family.

These parameters are characterized, but are not tested in manufacturing.

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