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PMPB48EP Datasheet(PDF) 8 Page - NXP Semiconductors |
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PMPB48EP Datasheet(HTML) 8 Page - NXP Semiconductors |
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8 / 14 page ![]() NXP Semiconductors PMPB48EP 30 V, single P-channel Trench MOSFET PMPB48EP All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved Product data sheet 10 September 2012 8 / 14 Tj (°C) -60 180 120 0 60 017aaa779 -2 -1 -3 -4 VGS(th) (V) 0 max typ min ID = -0.25 mA; VDS = VGS Fig. 12. Gate-source threshold voltage as a function of junction temperature VDS (V) -10-1 -102 -10 -1 017aaa780 103 102 104 C (pF) 10 Ciss Coss Crss f = 1 MHz; VGS = 0 V Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values QG (nC) 0 20 15 5 10 017aaa781 -4 -6 -2 -8 -10 VGS (V) 0 ID = -3.5 A; VDS = -15 V; Tamb = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values 017aaa137 VGS VGS(th) QGS1 QGS2 QGD VDS QG(tot) ID QGS VGS(pl) Fig. 15. Gate charge waveform definitions |
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