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EPC2TC32 Datasheet(PDF) 17 Page - Altera Corporation |
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EPC2TC32 Datasheet(HTML) 17 Page - Altera Corporation |
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17 / 26 page ![]() Timing Information Page 17 Configuration Devices for SRAM-Based LUT Devices January 2012 Altera Corporation Table 9 lists the timing parameters when using EPC1 and EPC1441 devices at 3.3 V. Table 10 lists the timing parameters when using EPC1, EPC2, and EPC1441 devices at 5.0 V. Table 9. Timing Parameters when Using EPC1 and EPC1441 Devices at 3.3 V Symbol Parameter Min Typ Max Units tPOR POR delay (1) —— 200 ms tOEZX OE high to DATA output enabled — — 80 ns tCE OE high to first rising edge on DCLK —— 300 ns tDSU Data setup time before rising edge on DCLK 30 — — ns tDH Data hold time after rising edge on DCLK 0— — ns tCO DCLK to DATA out — — 30 ns tCDOE DCLK to DATA enable/disable — — 30 ns fCLK DCLK frequency 2 4 10 MHz tMCH DCLK high time for the first device in the configuration chain 50 125 250 ns tMCL DCLK low time for the first device in the configuration chain 50 125 250 ns tSCH DCLK high time for subsequent devices 50 — — ns tSCL DCLK low time for subsequent devices 50 — — ns tCASC DCLK rising edge to nCASC — — 25 ns tCCA nCS to nCASC cascade delay — — 15 ns tOEW OE low pulse width (reset) to guarantee counter reset 100 — — ns tOEC OE low (reset) to DCLK disable delay — — 30 ns tNRCAS OE low (reset) to nCASC delay — — 30 ns Note to Table 9: (1) During initial power-up, a POR delay occurs to permit voltage levels to stabilize. Subsequent reconfigurations do not incur this delay. Table 10. Timing Parameters when Using EPC1, EPC2, and EPC1441 Devices at 5.0 V (Part 1 of 2) Symbol Parameter Min Typ Max Units tPOR POR delay (1) —— 200 ms tOEZX OE high to DATA output enabled — — 50 ns tCE OE high to first rising edge on DCLK —— 200 ns tDSU Data setup time before rising edge on DCLK 30 — — ns tDH Data hold time after rising edge on DCLK 0— — ns tCO DCLK to DATA out — — 20 ns tCDOE DCLK to DATA enable/disable — — 20 ns fCLK DCLK frequency 6.7 10 16.7 MHz tMCH DCLK high time for the first device in the configuration chain 30 50 75 ns tMCL DCLK low time for the first device in the configuration chain 30 50 75 ns tSCH DCLK high time for subsequent devices 30 — — ns tSCL DCLK low time for subsequent devices 30 — — ns tCASC DCLK rising edge to nCASC — — 20 ns tCCA nCS to nCASC cascade delay — — 10 ns |
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