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2SC5606 Datasheet(PDF) 5 Page - Renesas Technology Corp

Part # 2SC5606
Description  NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION
PDF  9 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5606 Datasheet(HTML) 5 Page - Renesas Technology Corp

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Data Sheet PU10781EJ01V0DS
3
2SC5606
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25
°C)
Mounted on Glass Epoxy Board
(1.08 cm
2
× 1.0 mm (t) )
200
150
115
100
50
0
25
0
50
75
100
125
150
Ambient Temperature TA (
°C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
f = 1 MHz
1.0
0.1
1.0
0.1
10.0
100.0
Collector to Base Voltage VCB (V)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
650 A
μ
IB 100 A step
μ
IB = 50 A
μ
250 A
μ
450 A
μ
40
30
20
10
0
12
3
04
Collector to Emitter Voltage VCE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
Base to Emitter Voltage VBE (V)
50
40
30
20
10
0
0.2
0.4
0.6
0.8
1.0
1.2
VCE = 2 V
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
1 000
100
10
0.1
10.0
1.0
100.0
VCE = 2 V
Remark The graphs indicate nominal characteristics.
<R>



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