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2SC5606 Datasheet(PDF) 6 Page - Renesas Technology Corp

Part # 2SC5606
Description  NPN SILICON RF TRANSISTOR FOR LOW NOISE HIGH-GAIN AMPLIFICATION
PDF  9 Pages
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Manufacturer  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SC5606 Datasheet(HTML) 6 Page - Renesas Technology Corp

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Data Sheet PU10781EJ01V0DS
4
2SC5606
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
Collector Current IC (mA)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
Collector Current IC (mA)
Collector Current IC (mA)
INSERTION POWER GAIN
vs. COLLECTOR CURRENT
VCE = 1 V
IC = 10 mA
35
25
30
20
15
10
5
0
0.1
1.0
10.0
Frequency f (GHz)
INSERTION POWER GAIN
vs. FREQUENCY
VCE = 2 V
IC = 20 mA
35
25
30
20
15
10
5
0
0.1
1.0
10.0
Frequency f (GHz)
INSERTION POWER GAIN
vs. FREQUENCY
30
25
20
15
10
5
0
1
10
100
VCE = 1 V
f = 2 GHz
30
25
20
15
10
5
0
1
10
100
VCE = 2 V
f = 2 GHz
16
14
12
10
8
6
4
2
0
1
10
100
VCE = 1 V
f = 2 GHz
16
14
12
10
8
6
4
2
0
1
10
100
VCE = 2 V
f = 2 GHz
Remark The graphs indicate nominal characteristics.



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