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TC253SPD Datasheet(PDF) 1 Page - Texas Instruments |
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TC253SPD Datasheet(HTML) 1 Page - Texas Instruments |
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1 / 19 page ![]() TC253SPD 680×500 PIXEL CCD IMAGE SENSOR SOCS062B – JANUARY 2001 – REVISED MAY 2002 1 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 D Very Low Noise, High Sensitivity, Electronically Variable D High Resolution, 1/3-in Format, Solid State Charge-Coupled Device (CCD) Frame Transfer Image Sensor for Black and White National Television and Standard Committee (NTSC) and Computer Applications D 340,000 Pixels per Field D Frame Memory D 656 (H) × 496 (V) Active Pixels in Image Sensing Area Compatible With Electronic Centering D Multimode Readout Capability – Progressive Scan – Interlace Scan – Line Summing D Fast Single-Pulse Clear Capability D Continuous Electronic Exposure Control from 1/60 s to 1/5,000 s D 7.4 µm Square Pixels D Advanced Lateral Overflow Drain D Low Dark Current D Solid State Reliability With No Image Burn-In, Residual Imaging, Image Distortion, Image Lag, or Microphonics D High Photoresponse Uniformity from Deep Ultraviolet (DUV) to Near Infrared (NIR) description The TC253SPD device is a frame-transfer, CCD image sensor designed for use in black and white NTSC TV, computer, and special-purpose applications that require high sensitivity, low noise, and small size. The TC253SPD sensor is a new device of the IMPACTRON t family of very low noise, high sensitivity image sensors that multiply charge directly in the charge domain before conversion to voltage. The charge carrier multiplication (CCM) is achieved by using a low-noise, single-carrier, impact ionization process that occurs during repeated carrier transfers through high field regions. Applying multiplication pulses to specially designed gates activates the CCM. The amount of multiplication is adjustable, depending on the amplitude of the multiplication pulses. The device function resembles the function of image intensifiers implemented in solid state. This MOS device contains limited built-in gate protection. During storage or handling, the device leads should be shorted together or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to VSS. Under no circumstances should pin voltages exceed absolute maximum ratings. Avoid shorting OUT to VSS during operation to prevent damage to the amplifier. The device can also be damaged if the output terminals are reverse-biased and an excessive current is allowed to flow. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. Copyright 2002, Texas Instruments Incorporated ADVANCE INFORMATION concerns new products in the sampling or preproduction phase of development. Characteristic data and other specifications are subject to change without notice. IMPACTRON is a trademark of Texas Instruments. All trademarks are the property of their respective owners. 1 2 3 4 5 67 8 9 10 11 12 DUAL-IN-LINE PACKAGE (TOP VIEW) ODB IAG2 SAG2 SRG1 SRG2 CMG NC IAG1 SAG1 SUB ADB Vout |
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