MTP3055V

3

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

0

1

2

3

4

5

0

8

16

24

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics

2

4

6

8

10

0

8

16

24

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0

4

8

16

24

0

0.10

0.20

0.30

0

8

20

24

0.08

0.09

0.13

0.15

ID, DRAIN CURRENT (AMPS)

Figure 3. On–Resistance versus Drain Current

and Temperature

ID, DRAIN CURRENT (AMPS)

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

– 50

0.6

0.8

1.2

1.6

0

20

50

60

1

10

100

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On–Resistance Variation with

Temperature

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 6. Drain–To–Source Leakage

Current versus Voltage

– 25

0

25

50

75

100

125

150

TJ = 25°C

VDS ≥ 10 V

TJ = – 55°C

25

°C

100

°C

TJ = 25°C

VGS = 0 V

VGS = 10 V

VGS = 10 V

ID = 6 A

9 V

8 V

6 V

5 V

4 V

7 V

4

12

20

3

5

7

9

4

12

20

VGS = 10 V

TJ = 100°C

25

°C

– 55

°C

12

20

4

12

16

10

30

40

0.05

0.15

0.25

0.10

0.12

0.14

0.11

1.0

1.4

TJ = 125°C

VGS = 10 V

15 V

175