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STL11N4LLF5 Datasheet(PDF) 4 Page - STMicroelectronics

Part # STL11N4LLF5
Description  N-channel 40 V, 9.1 m typ., 15 A STripFETV Power MOSFET in a PowerFLAT 3.3 x 3.3 package
PDF  14 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STL11N4LLF5 Datasheet(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STL11N4LLF5
4/14
Doc ID 024286 Rev 1
2
Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 4.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 250 μA, V
GS
= 0
40
V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= 40 V,
V
DS
= 40 V, T
C
=125 °C
1
10
μA
μA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ± 20 V
±
100
μA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250 μA
12.5
V
R
DS(on)
Static drain-source on-
resistance
V
GS
= 10 V, I
D
= 5.5 A
V
GS
= 4.5 V, I
D
= 5.5 A
9.1
10.6
9.7
12
m
Ω
m
Ω
Table 5.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
=25 V, f=1 MHz,
V
GS
=0
1570
257
32
pF
pF
pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
=15 V, I
D
= 11 A
V
GS
=4.5 V
(see Figure 14)
12.9
3.9
5.3
nC
nC
nC
R
G
Gate input resistance
f=1 MHz Gate DC Bias = 0
Test signal level = 20 mV
I
D
=0
0.5
1.5
2.5
Ω
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
=15 V, I
D
= 5.5 A,
R
G
=4.7
Ω, V
GS
=4.5 V
(see Figure 13)
-
14
42
37
5.2
-
ns
ns
ns
ns



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