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STL11N4LLF5 Datasheet(PDF) 5 Page - STMicroelectronics |
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STL11N4LLF5 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 14 page ![]() STL11N4LLF5 Electrical characteristics Doc ID 024286 Rev 1 5/14 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD Source-drain current - 11 A I SDM (1) 1. Pulse width limited by safe operating area. Source-drain current (pulsed) - 44 A V SD (2) 2. Pulsed: pulse duration=300 μs, duty cycle 1.5% Forward on voltage I SD =11 A, V GS =0 -1.1 V t rr Q rr I RRM Reverse recovery time Reverse recovery charge Reverse recovery current I SD =11 A, di/dt = 100 A/μs, V DD =20 V, Tj=150 °C (see Figure 18) - 27.2 24.5 1.8 ns nC A |
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