MTP52N06V datasheet(3/8 Pages) MOTOROLA

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MTP52N06V

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

ID, DRAIN CURRENT (AMPS)

Figure 3. On–Resistance versus Drain Current

and Temperature

ID, DRAIN CURRENT (AMPS)

Figure 4. On–Resistance versus Drain Current

and Gate Voltage

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On–Resistance Variation with

Temperature

VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 6. Drain–To–Source Leakage

Current versus Voltage

TJ = 25°C

VGS = 10 V

9 V

8 V

7 V

6 V

5 V

100

7.5

2.5

VDS ≥ 10 V

TJ = – 55°C

100

°C

VGS = 10 V

0.035

0.03

100

TJ = 100°C

°C

–55

°C

TJ = 25°C

0.023

0.015

VGS = 10 V

15 V

VGS = 10 V

ID = 26 A

1.75

1.5

0.5

0.25

– 50

– 25

100

125

150

VGS = 0 V

TJ = 125°C

1020

30405060

468

100

0.02

0.015

0.01

0.021

0.019

0.017

105

100

°C

175

110

3.5

4.5

5.5

6.5

0.025

0.005

110

0.022

0.020

0.018

0.016

1.25

0.75

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