BCP69 datasheet(6/12 Pages) NXP

6 / 12 page

2003 Nov 25

NXP Semiconductors

Product data sheet

NPN medium power transistor;

20 V, 1 A

BCP68

handbook, halfpage

MDB845

30 mm

20 mm

40 mm

32 mm

2.6 mm

1.3 mm

5 mm

1.6 mm

0.5 mm

3.96 mm

Fig.3 6 cm2 collector mounting pad.

Dimensions in mm.

CHARACTERISTICS

Tamb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector-base cut-off current

VCB = 25 V; IE = 0

−

100

VCB = 25 V; IE = 0; Tj = 150 °C

−

μA

IEBO

emitter-base cut-off current

VEB = 5 V; IC = 0

−

100

hFE

DC current gain

BCP68

VCE = 10 V; IC = 5 mA

−

VCE = 1 V; IC = 500 mA

−

375

VCE = 1 V; IC = 1 A

−

BCP68-25

VCE = 1 V; IC = 500 mA

160

−

375

VCEsat

collector-emitter saturation voltage IC = 1 A; IB = 100 mA

−

500

VBE

base-emitter voltage

VCE = 10 V; IC = 5 mA

−

700

VCE = 1 V; IC = 1 A

−

collector capacitance

VCB = 10 V; IE = ie = 0; f = 1 MHz

−

transition frequency

VCE = 5 V; IC = 50 mA; f = 100 MHz

170

−

MHz

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