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BAV99W Datasheet(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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BAV99W Datasheet(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 3 page  CREAT BY ART Fast switching device (Trr<4.0ns) Surface device type mounting Moisture sensitivity level 1 Matte Tin(Sn) lead finish with Nickel(Ni) underplate Pb free version and RoHS compliant Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date code Case：Flat lead SOT-323 small outline plastic package Terminal：Matte tin plated, solderable per MIL-STD-202, Method 208 guaranteed High temperature soldering guaranteed:260℃/S Polarity：Indicated by cathode band Weight：5 mg Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless otherwise specified. Absolute Maximum Ratings (TA=25℃) Symbol Units VRRM V VR V IFRM mA Ptot mW RthjA ℃ /W TJ OC TSTG OC Characteristics at TA=25℃ Symbol Units Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA nA uA uA uA Version：A13 30 0.855 1 1.25 500 at t = 1us at t = 1ms at t = 1s IFSM Repetitive Peak Forward Current Pin Configuration A 1 0.5 BAV99W Features Features SOT-323 Mechanical Data Continuous Forward Current Single Diode Load Double Diode Load 150 IF mA Small Signal Product Value 85 Switching Diode Array Peak Repetitive Reverse Voltage 130 Parameter 75 4 Total Power Dissipation 200 Thermal Resistance form Junction Ambient VF Storage Temperature Range - 55 to + 150 Junction Temperature Parameter Peak Forward Surge Current (tp=10ms) 625 Max. Reverse Voltage Total Capacitance at VR = 0 V, f = 1 MHz Reverse Revovery Time at IF = IR = 10 mA, Irr = 0.1 x IR, RL = 100 Ω Cd trr Reverse Current at VR = 25 V at VR = 75 V at VR = 25 V, Tj = 150℃ at VR = 75 V, Tj = 150℃ IR 150 pF ns 4 0.715 V 1.5 1 30 50 |
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Similar Description - BAV99W |
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