C unless otherwise specified

I

S

Continuous Source-Drain Diode Forward Current

--

--

12

A

I

SM

Pulsed Source-Drain Diode Forward Current

--

--

48

V

SD

Source-Drain Diode Forward Voltage

I

--

--

1.2

V

trr

Reverse Recovery Time

I

di

(Note 4)

--

360

--

Qrr

Reverse Recovery Charge

--

3.5

--

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

V

GS

Gate Threshold Voltage

V

2.5

--

3.5

V

R

DS(ON)

Static Drain-Source

On-Resistance

V

--

0.34

0.38

g

FS

Forward Transconductance

V

--

10

--

On Characteristics

BV

DSS

Drain-Source Breakdown Voltage

V

650

--

--

V

I

DSS

Zero Gate Voltage Drain Current

V

--

--

1

V

--

--

10

I

GSS

Gate-Body Leakage Current

V

20 V, V

--

--

100

Off Characteristics

C

iss

Input Capacitance

V

f = 1.0 MHz

--

1340

1740

C

oss

Output Capacitance

--

215

280

C

rss

Reverse Transfer Capacitance

--

6

8

Dynamic Characteristics

t

d(on)

Turn-On Time

V

R

(Note 4,5)

--

25

60

t

r

Turn-On Rise Time

--

60

130

t

d(off)

Turn-Off Delay Time

--

180

370

t

f

Turn-Off Fall Time

--

70

150

Q

g

Total Gate Charge

V

V

(Note 4,5)

--

32

42

nC

Q

gs

Gate-Source Charge

--

10

--

nC

Q

gd

Gate-Drain Charge

--

10

--

nC

Switching Characteristics

Source-Drain Diode Maximum Ratings and Characteristics

Package Marking and Ordering Information

Device Marking

Week Marking

Package

Packing

Quantity

RoHS Status

HCS12NK65V

YWWX

TO-220F

Tube

50

Pb Free

HCS12NK65V

YWWXg

TO-220F

Tube

50

Halogen Free

Notes ;

1. Repetitive Rating : Pulse width limited by maximum junction temperature

2. L=2.6mH, I

, Starting T

3. I

SD

di/dt

, V

DD

C

4. Pulse Test : Pulse Width

5. Essentially Independent of Operating Temperature