PEMD3_PIMD3_PUMD3

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© NXP B.V. 2013. All rights reserved.

Product data sheet

Rev. 11 — 25 September 2013

7 of 18

NXP Semiconductors

PEMD3; PIMD3; PUMD3

NPN/PNP resistor-equipped transistors

7.

Characteristics

[1]

Characteristics of built-in transistor.

Table 8.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per transistor; for the PNP transistor (TR2) with negative polarity

collector-base

cut-off current

-

-

100

nA

collector-emitter

cut-off current

--1

A

--5

A

emitter-base

cut-off current

-

-

400

A

DC current gain

30

-

-

collector-emitter

saturation voltage

-

-

150

mV

off-state input

voltage

1.1

0.8

V

on-state input

voltage

2.5

1.8

-

V

R1

bias resistor 1 (input)

7

10

13

k



R2/R1

bias resistor ratio

0.8

1

1.2

f= 1MHz

TR1 (NPN)

-

-

2.5

pF

TR2 (PNP)

-

-

3

pF

transition frequency

f = 100 MHz

[1]

TR1 (NPN)

-

230

-

MHz

TR2 (PNP)

-

180

-

MHz