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PUMD3 Datasheet(PDF) 9 Page - NXP Semiconductors |
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PUMD3 Datasheet(HTML) 9 Page - NXP Semiconductors |
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9 / 18 page ![]() PEMD3_PIMD3_PUMD3 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 11 — 25 September 2013 9 of 18 NXP Semiconductors PEMD3; PIMD3; PUMD3 NPN/PNP resistor-equipped transistors f = 1 MHz; Tamb =25 CVCE =5V; Tamb =25 C Fig 9. TR1 (NPN): Collector capacitance as a function of collector-base voltage; typical values Fig 10. TR1 (NPN): Transition frequency as a function of collector current; typical values of built-in transistor VCE = 5V (1) Tamb = 100 C (2) Tamb =25 C (3) Tamb = 40 C IC/IB =20 (1) Tamb = 100 C (2) Tamb =25 C (3) Tamb = 40 C Fig 11. TR2 (PNP): DC current gain as a function of collector current; typical values Fig 12. TR2 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values VCB (V) 050 40 20 30 10 006aac772 1 2 3 Cc (pF) 0 006aac757 IC (mA) 10-1 102 10 1 102 103 fT (MHz) 10 IC (mA) -10-1 -102 -10 -1 006aac773 102 10 103 hFE 1 (1) (2) (3) IC (mA) -1 -102 -10 006aac774 -10-1 -1 VCEsat (V) -10-2 (1) (2) (3) |
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