13002AGP-T92-R datasheet(2/4 Pages) UTC

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13002AG

Preliminary

NPN SILICON TRANSISTOR

UNISONICTECHNOLOGIESCO.,LTD

2 of 4

www.unisonic.com.tw

QW-R201-090.b



ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector Emitter Voltage (VBE = 0)

VCES

700

Collector Emitter Voltage (IB = 0)

VCEO

400

Emitter Base Voltage (IC = 0)

VEBO

Collector Current

0.75

Collector Peak Current (tp < 5 ms)

ICM

0.5

Base Current

0.4

Base Peak Current (tp < 5 ms)

IBM

0.75

Total Dissipation at Ta = 25°C

0.95

Junction Temperature

+150

°C

Storage Temperature

TSTG

-40 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



THERAMAL DATA

PARAMETER

SYMBOL

RATINGS

UNIT

Thermal Resistance Junction-ambient

θJA

130

°C /W



ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

Collector Emitter Sustaining Voltage (IB = 0)

(Note)

VCEO(SUS) IC = 1 mA

700

Collector Emitter Saturation Voltage (Note)

VCE(SAT)

IC = 0.2 A , IB = 40 mA

0.2

0.5

IC = 0.3 A , IB = 75 mA

0.3

IC = 0.4 A , IB = 135 mA

0.4

1.5

Base Emitter Saturation Voltage (Note)

VBE(SAT)

IC = 0.2 A , IB = 40 mA

IC = 0.3 A , IB = 75 mA

1.2

Emitter Cut off Current (IC = 0)

IEBO

VEB = 9 V

Collector Cut off Current (VBE = -1.5V)

ICEV

VCE = 700 V

250

μ A

DC Current Gain

hFE*

IC = 0.2 A, VCE = 5 V

IC = 0.4 A, VCE = 5 V

Inductive Load Fall Time

IC = 0.2 A , VCLAMP = 300 V

IB1 = -IB2 = 40 mA , L = 3 mH

0.3

μ s

Note: Pulsed: Pulse duration = 300μs, duty cycle = 1.5 %

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