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IXFR80N60P3 Datasheet(PDF) 1 Page - IXYS Corporation

Part # IXFR80N60P3
Description  Polar3TM HiPerFETTM Power MOSFET
PDF  5 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFR80N60P3 Datasheet(HTML) 1 Page - IXYS Corporation

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Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
C to 150C
600
V
V
DGR
T
J
= 25
C to 150C, R
GS = 1M
600
V
V
GSS
Continuous
30
V
V
GSM
Transient
40
V
I
D25
T
C = 25C
48
A
I
DM
T
C
= 25
C, Pulse Width Limited by T
JM
200
A
I
A
T
C
= 25
C40
A
E
AS
T
C
= 25
C2
J
dv/dt
I
S
 I
DM, VDD  VDSS, TJ  150C
35
V/ns
P
D
T
C
= 25
C
540
W
T
J
-55 ... +150
C
T
JM
150
C
T
stg
-55 ... +150
C
T
L
Maximum Lead Temperature for Soldering
300
°C
T
SOLD
Plastic Body for 10s
260
°C
V
ISOL
50/60 Hz, 1 Minute
2500
V
F
C
Mounting Force
20..120/4.5..27
N/lb
Weight
5
g
Symbol
Test Conditions
Characteristic Values
(T
J = 25C Unless Otherwise Specified)
Min.
Typ.
Max.
BV
DSS
V
GS = 0V, ID = 1mA
600
V
V
GS(th)
V
DS = VGS, ID = 8mA
3.0
5.0
V
I
GSS
V
GS = 30V, VDS = 0V
200 nA
I
DSS
V
DS = VDSS, VGS = 0V
50
A
T
J = 125C
4 mA
R
DS(on)
V
GS = 10V, ID = 40A, Note 1
85 m
IXFR80N60P3
V
DSS
=
600V
I
D25
=
48A
R
DS(on)

85m
t
rr

250ns
DS100357B(04/14)
N-Channel Enhancement Mode
Fast Intrinsic Rectifier
Features
Silicon Chip on Direct-Copper Bond
(DCB) Substrate
Isolated Mounting Surface
Low Intrinsic Gate Resistance
2500V~ Electrical Isolation
Dynamic dv/dt Rating
Avalanche Rated
Fast Intrinsic Rectifier
Low Q
G
Low R
DS(on)
Low Drain-to-Tab Capacitance
Low Package Inductance
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
Uninterrupted Power Supplies
AC Motor Drives
High Speed Power Switching
Applications
Polar3TM HiPerFETTM
Power MOSFET
G = Gate
D
= Drain
S = Source
ISOPLUS247
E153432
G
S
D
Isolated
Tab


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