MTS2072G6 datasheet(2/13 Pages) CYSTEKEC

2 / 13 page

CYStech Electronics Corp.

Spec. No. : C879G6

Issued Date : 2012.10.09

Revised Date :

Page No. : 2/13

MTS2072G6

CYStek Product Specification

Absolute Maximum Ratings (Ta=25

°C)

Limits

Parameter

Symbol

N-channel N-channel

Unit

Drain-Source Breakdown Voltage

BVDSS

Gate-Source Voltage

VGS

Continuous Drain Current @TA=25

°C, VGS=10V (Note 1)

0.53

5.6

Continuous Drain Current @TA=70

°C, VGS=10V (Note 1)

0.42

4.5

Pulsed Drain Current (Note 2)

IDM

1.14

Total Power Dissipation (Note 1)

Linear Derating Factor

0.01

W /

°C

Operating Junction and Storage Temperature

Tj, Tstg

-55~+150

°C

Thermal Resistance, Junction-to-Ambient (Note 1)

Rth,ja

110

°C/W

Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec; 180

°C/W when mounted on minimum copper pad.

Pulse width limited by maximum junction temperature.

Tr 1, N-Channel Electrical Characteristics (Tj=25

°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BVDSS

VGS=0, ID=250μA

VGS(th)

0.9

1.5

2.4

VDS=VGS, ID=250μA

IGSS

±10

VGS=±20V, VDS=0

VDS=60V, VGS=0

IDSS

μA

VDS=48V, VGS=0, Tj=70

°C

1.2

2.5

ID=500mA, VGS=10V

*RDS(ON)

1.6

ID=100mA, VGS=4.5V

*GFS

100

215

VDS=10V, ID=100mA

Dynamic

Ciss

Coss

Crss

4.1

VDS=10V, VGS=0, f=1MHz

*td(ON)

2.5

*tr

6.3

*td(OFF)

*tf

4.4

VDS=30V, ID=100mA, VGS=10V, RG=25Ω

*Qg

0.9

*Qgs

0.1

*Qgd

0.3

VDS=30V, ID=0.53A, VGS=10V

Source-Drain Diode

*IS

0.53

*ISM

*VSD

0.8

1.2

VGS=0V, IS=100mA

*Pulse Test : Pulse Width

≤300μs, Duty Cycle≤2%

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