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GP1600FSM18 Datasheet(PDF) 1 Page - Dynex Semiconductor |
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GP1600FSM18 Datasheet(HTML) 1 Page - Dynex Semiconductor |
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1 / 9 page ![]() GP1600FSM18 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/9 www.dynexsemi.com FEATURES s High Thermal Cycling Capability s 1600A Per Module s Non Punch Through Silicon s Isolated MMC Base with AlN Substrates APPLICATIONS s High Reliability Inverters s Motor Controllers s Traction Drives s Resonant Converters The Powerline range of high power modules includes dual and single switch configurations covering voltages from 1200V to 3300V and currents up to 4800A. The GP1600FSM18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. This device is optimised for traction drives and other applications requiring high thermal cycling capability or very high reliability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. ORDERING INFORMATION Order As: GP1600FSM18 Note: When ordering, please use the whole part number. KEY PARAMETERS V CES 1800V V CE(sat) (typ) 3.5V I C (max) 1600A I C(PK) (max) 3200A GP1600FSM18 Hi-Reliability Single Switch IGBT Module Replaces May 2000 version, DS5361-1.1 DS5361-2.3 January 2001 Fig. 1 Single switch circuit diagram Fig. 2 Electrical connections - (not to scale) Outline type code: F (See package details for further information) C1 E1 C2 E2 G Aux E Aux C C2 C1 Aux C G Aux E E1 E2 External connection External connection |
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