GP201MHS18

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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FEATURES

s

Low V

CE(SAT)

s

Non Punch Through Silicon

s

Isolated Copper Baseplate

s

Low Inductance Internal Construction

s

200A Per Arm

APPLICATIONS

s

High Reliability Inverters

s

Motor Controllers

s

Traction Drives

s

Resonant Converters

The Powerline range of high power modules includes half

bridge, dual and single switch configurations covering voltages

from 600V to 3300V and currents up to 4800A.

The GP201MHS18 is a half bridge 1800V, n channel

enhancement mode, insulated gate bipolar transistor (IGBT)

module.

Designed with low V

CE(SAT)

to minimise conduction

losses, the module is of particular relevance in low to medium

frequency applications. The IGBT has a wide reverse bias safe

operating area (RBSOA) ensuring reliability in demanding

applications.

The module incorporates an electrically isolated base plate

and low inductance construction enabling circuit designers to

optimise circuit layouts and utilise earthed heat sinks for safety.

ORDERING INFORMATION

Order As:

GP201MHS18

Note: When ordering, please use the complete part number.

KEY PARAMETERS

V

CES

1800V

V

CE(sat)

(typ)

2.6V

I

C

(max)

200A

I

C(PK)

(max)

400A

GP201MHS18

Low V

DS5290-2.1 January 2001

Fig. 1 Half bridge circuit diagram

Fig. 2 Electrical connections - (not to scale)

Outline type code: M

(See package details for further information)

3(C

2(E

1(E

1

2

3

11

10

8

9

5

4

6

7