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GP201MHS18 Datasheet(PDF) 6 Page - Dynex Semiconductor

Part # GP201MHS18
Description  Low VCE(SAT) Half Bridge IGBT Module
PDF  10 Pages
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Manufacturer  DYNEX [Dynex Semiconductor]
Direct Link  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

GP201MHS18 Datasheet(HTML) 6 Page - Dynex Semiconductor

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GP201MHS18
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Fig. 7 Typical diode turn-off energy vs collector current
Fig. 9 Diode typical forward characteristics
Fig. 10 Reverse bias safe operating area
0
5
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15
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0
25
50
75
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125
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Collector current, IT - (A)
Tcase = 25˚C
Tcase = 125˚C
VGE = ±15V
VCE = 900V
Fig. 7 Typical diode reverse recovery charge vs collector current
0120
40
20
80
60
100
Collector current, IC - (A)
0
600
Tcase = 125˚C
VGE = ±15V
VCE = 900V
Rg = 4.7Ω
td(on)
tf
tr
td(off)
300
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500
140
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180 200
0
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0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
Foward voltage, VF - (V)
Tj = 125˚C
Tj = 25˚C
0
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0
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Collector-emitter voltage, Vce - (V)
Tcase = 125˚C
Vge = ±15V
Rg(min) = 4.7Ω
Rg(min) : Minimum recommended value



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