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GP400DDM12 Datasheet(PDF) 5 Page - Dynex Semiconductor

Part # GP400DDM12
Description  Dual Switch IGBT Module Advance Information
PDF  9 Pages
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Manufacturer  DYNEX [Dynex Semiconductor]
Direct Link  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

GP400DDM12 Datasheet(HTML) 5 Page - Dynex Semiconductor

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GP400DDM12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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www.dynexsemi.com
TYPICAL CHARACTERISTICS
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
0
100
200
300
600
700
800
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, Vce - (V)
Vge = 20/15/12/10V
Common emitter
Tcase = 25˚C
500
400
0
100
200
300
600
700
800
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, Vce - (V)
Vge = 20/15/12/10V
Common emitter
Tcase = 125˚C
500
400
0
20
10
30
40
50
60
70
80
90
0
100
200
300
400
500
Collector current, IC - (A)
Eoff
Eon
Conditions:
Vce = 600V
Tc = 125°C
Rg = 4.7Ω
0
40
80
100
140
20
60
120
160
Gate Resistance, Rg - (Ohms)
04
8
12
16
Conditions:
Vce = 900V
IC = 400A
Tc = 125°C
Eoff
Eon



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